Review of Scientific Instruments
he construction of a high‐voltage (up to 1000 V) bipolar metal‐oxide‐semiconductor field‐effect transistor square‐wave generator is described. This generator is capable of producing both positive and negative going square waves with variable amplitude, repetition rate, and width. The circuit was designed for ferroelectrics research, however other applications are possible. The rise time of the prototype was 200 ns which was quite satisfactory for the present ferroelectric research project however the rise time can be decreased to 50 ns if necessary. The reader with a modest knowledge of electronics should be able to construct the circuit. Possible pitfalls and critical points are discussed.
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Review of Scientific Instruments 64, 2027 (1993) and may be found at https://doi.org/10.1063/1.1143994
Usher, T. D. and McAuley, Grant A., "High-voltage MOSFET bipolar square-wave generator" (1993). Physics Faculty Publications. 3.